US Patent Issued to International Business Machines on Dec. 9 for "Suppression of void-formation of PCM materials" (New York Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,722, issued on Dec. 9, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Suppression of void-formation of PCM materials" was invented by Cheng-Wei Cheng (White Plains, N.Y.), Robert L. Bruce (White Plains, N.Y.), Matthew Joseph BrightSky (Armonk, N.Y.) and Gloria Wing Yun Fraczak (Queens, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A bottom electrode is deposited on a substrate. A dielectric layer is deposited on the bottom electrode. One or more structures are patterned within the dielectric layer. A liner layer is deposited on top of the dielectric layer and the bottom electrode. A selectivity promotion layer is deposit...