US Patent Issued to International Business Machines on Dec. 9 for "Self-aligned contact (SAC) in nanosheet transistors" (New York Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,587, issued on Dec. 9, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Self-aligned contact (SAC) in nanosheet transistors" was invented by Kangguo Cheng (Schenectady, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Julien Frougier (Albany, N.Y.) and Chanro Park (Clifton Park, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the invention include a method for fabricating a semiconductor device and the resulting structure. A nanosheet stack of alternating nanosheets of a sacrificial semiconductor material nanosheet and a semiconductor channel material nanosheet and a dielectric nanosheet as a top layer of the nanosheet s...