US Patent Issued to International Business Machines on Dec. 30 for "CFET with independent gate control and low parasitic capacitance" (New York Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,985, issued on Dec. 30, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"CFET with independent gate control and low parasitic capacitance" was invented by Ruilong Xie (Niskayuna, N.Y.), Carl Radens (LaGrangeville, N.Y.), Kangguo Cheng (Schenectady, N.Y.) and Juntao Li (Cohoes, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure is provided that includes a second nanosheet device of a second conductivity type stacked over a first nanosheet device of a first conductivity type that is different from the second conductivity type. Each of the first and second nanosheet devices includes at least one semicond...