ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,506,080, issued on Dec. 23, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.).
"Reduced capacitance between power via bar and gates" was invented by Ruilong Xie (Niskayuna, N.Y.), Kisik Choi (Watervliet, N.Y.), Reinaldo Vega (Mahopac, N.Y.), Albert M. Chu (Nashua, N.H.), Nicholas Anthony Lanzillo (Wynantskill, N.Y.) and Lawrence A. Clevenger (Saratoga Springs, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "One or more systems, devices, and/or methods of fabrication provided herein relate to reduced parasitic capacitance of power via bars. According to one embodiment, a semiconductor device can comprise a field-effect transistor (...