US Patent Issued to International Business Machines on Dec. 23 for "Direct backside self-aligned contact" (New York, California Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,437, issued on Dec. 23, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Direct backside self-aligned contact" was invented by Ruilong Xie (Niskayuna, N.Y.), Julien Frougier (Albany, N.Y.), Chen Zhang (Guilderland, N.Y.), Min Gyu Sung (Latham, N.Y.) and Heng Wu (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure is provided including a backside source/drain contact structure that contacts a source/drain region of a transistor and overlaps a portion of a tri-layered bottom dielectric isolation structure that is located on a backside of the transistor. The presence of the tri-layered bott...