US Patent Issued to International Business Machines on Dec. 2 for "Stacked field effect transistor" (New Hampshire, Vermont, New York Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,465, issued on Dec. 2, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Stacked field effect transistor" was invented by Brent A. Anderson (Jericho, Vt.), Ruilong Xie (Niskayuna, N.Y.), Albert M. Young (Fishkill, N.Y.) and Albert M. Chu (Nashua, N.H.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided. The semiconductor device includes a bottom field effect transistor (FET) including a bottom source-drain epitaxial layer formed on sides of the bottom FET; a top FET stacked over the bottom FET; a back-end-of-line (BEOL) layer formed on the top FET; a bottom gate contact formed in contact with the bot...