US Patent Issued to International Business Machines on Dec. 2 for "Semiconductor passive device integration for silicon-on-insulator substrate" (New York Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,489,035, issued on Dec. 2, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Semiconductor passive device integration for silicon-on-insulator substrate" was invented by Ruilong Xie (Niskayuna, N.Y.), Kisik Choi (Watervliet, N.Y.), Tenko Yamashita (Schenectady, N.Y.), John Christopher Arnold (North Chatham, N.Y.) and Lawrence A. Clevenger (Saratoga Springs, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes logic device and passive device regions. The logic device region includes field effect transistors (FETs) having a gate structure and a source/drain region disposed on opposing sides of the gate...