US Patent Issued to INTERNATIONAL BUSINESS MACHINES on Dec. 16 for "Support dielectric fin to prevent gate flop-over in nanosheet transistors" (New York Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,500,183, issued on Dec. 16, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.).

"Support dielectric fin to prevent gate flop-over in nanosheet transistors" was invented by Juntao Li (Cohoes, N.Y.), Min Gyu Sung (Latham, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Julien Frougier (Albany, N.Y.) and Chanro Park (Clifton Park, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "One or more systems, devices, and/or methods of fabrication provided herein relate to nanosheet transistors with support dielectric pillars. According to one embodiment, a transistor device can comprise an active transistor fin and a support dielectric pillar located adj...