US Patent Issued to International Business Machines on Dec. 16 for "Stacked transistors having self aligned backside contact with backside replacement metal gate" (New York Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,698, issued on Dec. 16, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Stacked transistors having self aligned backside contact with backside replacement metal gate" was invented by Ruilong Xie (Niskayuna, N.Y.), Julien Frougier (Albany, N.Y.), Chanro Park (Clifton Park, N.Y.), Min Gyu Sung (Latham, N.Y.) and Juntao Li (Cohoes, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure including stacked transistor structures each including a top device stacked directly above a bottom device, and a placeholder dielectric and a backside gate contact within a dielectric capping layer beneath the stacked transi...