US Patent Issued to International Business Machines on Aug. 5 for "Wrap-around-contact for 2D-channel gate-all-around field-effect-transistors" (New York Inventors)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,662, issued on Aug. 5, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Wrap-around-contact for 2D-channel gate-all-around field-effect-transistors" was invented by Julien Frougier (Albany, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Kangguo Cheng (Schenectady, N.Y.), Chanro Park (Clifton Park, N.Y.) and Andrew Gaul (Halfmoon, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments herein describe FETs with channels connected on the sides to a metal liner. To avoid the difficulties of connecting the sides of the channels to metal liners for the drain and source regions, the embodiments herein form a male/female contact between...