ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,708, issued on Aug. 5, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Vertical stacked nanosheet CMOS transistors with different work function metals" was invented by Kangguo Cheng (Schenectady, N.Y.), Juntao Li (Cohoes, N.Y.), Ruilong Xie (Niskayuna, N.Y.) and Chanro Park (Clifton Park, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor device includes forming a structure having at least a first nanosheet stack for a first device, a second nanosheet stack for a second device and disposed over the first nanosheet stack, a disposable gate structure, and a gate spacer. The disposable gate st...