US Patent Issued to International Business Machines on Aug. 5 for "Increased gate length at given footprint for nanosheet device" (New York Inventors)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,665, issued on Aug. 5, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Increased gate length at given footprint for nanosheet device" was invented by Ruilong Xie (Niskayuna, N.Y.), Julien Frougier (Albany, N.Y.), Kangguo Cheng (Albany, N.Y.) and Chanro Park (Clifton Park, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structures having an increased gate length are provided by providing a vertical stack of suspended semiconductor channel material nanosheets that include a middle portion located between a first end portion and a second end portion. The middle portion of each suspended semiconductor channel mate...