US Patent Issued to International Business Machines on Aug. 5 for "Gate-all-around nanosheet-FET with variable channel geometries for performance optimization" (New York Inventors)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,682, issued on Aug. 5, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Gate-all-around nanosheet-FET with variable channel geometries for performance optimization" was invented by Julien Frougier (Albany, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Heng Wu (Guilderland, N.Y.), Chen Zhang (Guilderland, N.Y.) and Alexander Reznicek (Troy, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device comprising a first nanosheet located on top of a substrate, wherein the first nanosheet is tapered the Y-direction to have a width W1 and the first nanosheet is tapered in the X-direction to have a length L1. A second nanosheet...