US Patent Issued to International Business Machines on Aug. 26 for "Stressed material within gate cut region" (New York Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,391, issued on Aug. 26, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Stressed material within gate cut region" was invented by Huimei Zhou (Albany, N.Y.), Andrew M. Greene (Slingerlands, N.Y.), Michael P. Belyansky (Halfmoon, N.Y.), Oleg Gluschenkov (Tannersville, N.Y.), Robert Robison (Rexford, N.Y.), Juntao Li (Cohoes, N.Y.), Richard A. Conti (Altamont, N.Y.) and Fee Li Lie (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate with a planar top surface. At least a first gate cut stressor within a first gate cut region separates a first transistor region from a second tran...