US Patent Issued to INTERNATIONAL BUSINESS MACHINES on Aug. 26 for "Nanosheet device with T-shaped dual inner spacer" (New York Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,342, issued on Aug. 26, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.).

"Nanosheet device with T-shaped dual inner spacer" was invented by Pouya Hashemi (Purchase, N.Y.), Alexander Reznicek (Troy, N.Y.), Takashi Ando (Eastchester, N.Y.) and Ruilong Xie (Niskayuna, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A field effect device is provided. The field effect device includes a semiconductor nanosheet segment above a substrate, and a T-shaped inner spacer on the semiconductor nanosheet segment. The field effect device further includes a gate dielectric layer on the semiconductor nanosheet segment, and a first work functio...