US Patent Issued to INTERNATIONAL BUSINESS MACHINES on Aug. 26 for "Co-integrated resonant tunneling diode and field effect transistor" (Swiss Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,398, issued on Aug. 26, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.).

"Co-integrated resonant tunneling diode and field effect transistor" was invented by Eunjung Cha (Zurich), Bogdan Cezar Zota (Rueschlikon, Switzerland), Kirsten Emilie Moselund (Ruschlikon, Switzerland) and Katarzyna Hnida-Gut (Rueschlikon, Switzerland).

According to the abstract* released by the U.S. Patent & Trademark Office: "One or more systems, devices and/or methods provided herein relate to a device that can facilitate generation of a pulse to affect a qubit and to a method that can facilitate fabrication of a semiconductor device. The semiconductor device can comprise an RTD and ...