US Patent Issued to International Business Machines on Aug. 19 for "Gate all-around device with through-stack nanosheet 2D channel" (New York Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,212, issued on Aug. 19, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Gate all-around device with through-stack nanosheet 2D channel" was invented by Tao Li (Slingerlands, N.Y.), Ardasheir Rahman (Schenectady, N.Y.), Tsung-Sheng Kang (Ballston Lake, N.Y.) and Shogo Mochizuki (Mechanicville, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor channel material structure is provided that has an improved, i.e., increased, effective channel area. The semiconductor channel material structure includes a plurality of semiconductor channel material nanosheets stacked one atop the other. The increased channel area is a...