US Patent Issued to International Business Machines on Aug. 19 for "Buried power rail after replacement metal gate" (New York Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,394,660, issued on Aug. 19, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Buried power rail after replacement metal gate" was invented by Devika Sarkar Grant (Rensselaer, N.Y.), Sagarika Mukesh (Albany, N.Y.), Kisik Choi (Watervliet, N.Y.), Somnath Ghosh (Clifton Park, N.Y.) and Ruilong Xie (Niskayuna, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments herein include semiconductor structures with a first source/drain (S/D) connected to a first field-effect transistor (FET) region, a second S/D connected to a second FET region, and a buried power rail (BPR) region. The BPR region may include a BPR, a first dielectric...