ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,813, issued on Aug. 12, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Resistive switching memory cell" was invented by Kangguo Cheng (Schenectady, N.Y.), Julien Frougier (Albany, N.Y.), Ruilong Xie (Niskayuna, N.Y.) and Chanro Park (Clifton Park, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A resistive random access memory (ReRAM) device is provided. The ReRAM device includes a first electrode including a first conductive layer sandwiching a second conductive layer, the second conductive layer being wider than the first conductive layer; a resistive switching element layer formed in contact with sidewalls of the first...