US Patent Issued to International Business Machines on Aug. 12 for "Magnetoresistive random-access memory (MRAM) with preserved underlying dielectric layer" (New York Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,803, issued on Aug. 12, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Magnetoresistive random-access memory (MRAM) with preserved underlying dielectric layer" was invented by Ashim Dutta (Clifton Park, N.Y.), Shyng-Tsong Chen (Rensselaer, N.Y.), Terry A. Spooner (Mechanicville, N.Y.) and Chih-Chao Yang (Glenmont, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the invention include a method for fabricating a semiconductor device and the resulting structure. A substrate having an embedded memory area interconnect structure and an embedded non-memory area interconnect structure is provided, the memory area i...