US Patent Issued to International Business Machines on Aug. 12 for "High density stacked vertical transistor static random access memory structure" (New Hampshire, New York, Vermont Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,582, issued on Aug. 12, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"High density stacked vertical transistor static random access memory structure" was invented by Brent A Anderson (Jericho, Vt.), Albert M Chu (Nashua, N.H.), Junli Wang (Slingerlands, N.Y.) and Hemanth Jagannathan (Niskayuna, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments disclosed herein include a semiconductor structure. The semiconductor structure may include a static random access memory (SRAM) cell. The SRAM cell may include a first section of the SRAM cell with a first pull-up transistor, first pull-down transistor, and first pass-ga...