US Patent Issued to International Business Machines on April 8 for "Stacked FET sidewall strap connections between gates" (New York Inventors)

ALEXANDRIA, Va., April 9 -- United States Patent no. 12,274,089, issued on April 8, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Stacked FET sidewall strap connections between gates" was invented by Chen Zhang (Guilderland, N.Y.), Julien Frougier (Albany, N.Y.), Ruilong Xie (Niskayuna, N.Y.) and Heng Wu (Guilderland, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A set of stacked transistors, system, and method to connect the gates of stacked field-effect transistors through sidewall straps. The set of stacked transistors may include a first transistor including a first gate. The set of stacked transistors may also include a second transistor including a second gate, where the ...