US Patent Issued to International Business Machines on April 8 for "Phase change memory cell having pillar bottom electrode with improved thermal insulation" (New York Inventors)

ALEXANDRIA, Va., April 9 -- United States Patent no. 12,274,185, issued on April 8, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Phase change memory cell having pillar bottom electrode with improved thermal insulation" was invented by Juntao Li (Cohoes, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Kangguo Cheng (Schenectady, N.Y.) and Carl Radens (LaGrangeville, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A phase-change memory device includes a bottom electrode; a stack of alternating electrical conductor layers directly contacting a top surface of the bottom electrode; a metal pillar directly contacting a top surface of the stack; a phase change material element directly contactin...