US Patent Issued to International Business Machines on April 29 for "Magneto-resistive random access memory with segmented bottom electrode" (New York Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,289,896, issued on April 29, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Magneto-resistive random access memory with segmented bottom electrode" was invented by Oscar van der Straten (Guilderland Center, N.Y.), Willie Lester Muchrison Jr. (Troy, N.Y.), Lisamarie White (Staatsburg, N.Y.) and Chih-Chao Yang (Glenmont, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magneto-resistive random access memory with segmented bottom electrode includes a magnetic tunnel junction pillar above a first portion of a bottom electrode layer, the first portion of the bottom electrode layer includes a metal region. A sidewall spacer is disp...