ALEXANDRIA, Va., June 6 -- United States Patent no. 12,284,922, issued on April 22, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.).

"Stacked access device and resistive memory" was invented by Hiroyuki Miyazoe (White Plains, N.Y.), Gloria W. Y. Fraczak (Bayside, N.Y.), Kumar R. Virwani (Santa Clara, Calif.) and Takashi Ando (Eastchester, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including stacked access device and resistive memory includes a stack disposed on a base structure, the stack including an access device stack and a resistive random-access memory (ReRAM) device stack, sidewall spacers disposed along a portion of the stack, a dielectric layer dis...