ALEXANDRIA, Va., June 5 -- United States Patent no. 12,279,454, issued on April 15, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Zero expansion in a replacement metal gate process with a spacer" was invented by Youseung Jin (Ballston Spa, N.Y.), Elnatan Mataev (Poughkeepsie, N.Y.), Jonathan Fry (Fishkill, N.Y.) and Dominic Rossillo (Highland, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Zero expanded functional gate structures are formed by utilizing a dipole material spacer as a means to prevent expanded void formation during a replacement metal gate process. Notably, the dipole material spacer prevents expanded void formation into the dielectric spacer thus preventing the f...