ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,237, issued on April 15, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Stacked FETS with non-shared work function metals" was invented by Ruilong Xie (Niskayuna, N.Y.), Julien Frougier (Albany, N.Y.), Junli Wang (Slingerlands, N.Y.), Dechao Guo (Niskayuna, N.Y.), Ruqiang Bao (Niskayuna, N.Y.), Rishikesh Krishnan (Cohoes, N.Y.) and Balasubramanian S. Pranatharthiharan (Santa Clara, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure is provided that includes a first FET device stacked over a second FET device, wherein the first FET device contains a first functional gate structure containing a first...