ALEXANDRIA, Va., June 5 -- United States Patent no. 12,279,452, issued on April 15, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Stacked complementary transistor structure for three-dimensional integration" was invented by Kangguo Cheng (Schenectady, N.Y.), Shogo Mochizuki (Mechanicville, N.Y.) and Juntao Li (Cohoes, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A device comprises a first interconnect structure, a second interconnect structure, a stacked complementary transistor structure, a first contact, and a second contact. The stacked complementary transistor structure is disposed between the first and second interconnect structures. The stacked complementary transistor s...