ALEXANDRIA, Va., June 5 -- United States Patent no. 12,277,960, issued on April 15, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Modified top electrode contact for MRAM embedding in advanced logic nodes" was invented by Ashim Dutta (Clifton Park, N.Y.), Dominik Metzler (Clifton Park, N.Y.), Oscar van der Straten (Guilderland Center, N.Y.) and Theodorus E. Standaert (Clifton Park, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device with modified top electrode contact includes a memory pillar composed of a bottom electrode, a magnetic random-access memory (MRAM) stack above the bottom electrode, and a top electrode above the MRAM stack. A first portion of an encapsulat...