US Patent Issued to International Business Machines on April 1 for "Source or drain template for reducing strain loss in spaced-apart nanosheet channels" (New York Inventors)

ALEXANDRIA, Va., April 2 -- United States Patent no. 12,268,020, issued on April 1, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Source or drain template for reducing strain loss in spaced-apart nanosheet channels" was invented by Shogo Mochizuki (Mechanicville, N.Y.) and Nicolas Loubet (Guilderland, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the invention are directed to a semiconductor-based structure that includes a stack having spaced-apart non-sacrificial nanosheets. A source or drain (S/D) trench is adjacent to the stack, wherein the S/D trench includes a bottom surface and sidewalls. A S/D template layer includes a continuous layer of a first type of s...