ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,106, issued on March 18, was assigned to INTERATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.).
"Multi-Vt nanosheet devices" was invented by Jingyun Zhang (Albany, N.Y.), Takashi Ando (Eastchester, N.Y.), ChoongHyun Lee (Chigasaki, Japan) and Alexander Reznicek (Troy, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method is presented for attaining different gate threshold voltages across a plurality of field effect transistor (FET) devices without patterning between nanosheet channels. The method includes forming a first set of nanosheet stacks having a first intersheet spacing, forming a second set of nanosheet stacks having a second intershe...