US Patent Issued to Intel on Sept. 30 for "Thin film transistors having strain-inducing structures integrated with 2D channel materials" (Oregon Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,976, issued on Sept. 30, was assigned to Intel Corp. (Santa Clara, Calif.).

"Thin film transistors having strain-inducing structures integrated with 2D channel materials" was invented by Chelsey Dorow (Portland, Ore.), Kevin P. O'Brien (Portland, Ore.), Carl Naylor (Portland, Ore.), Kirby Maxey (Hillsboro, Ore.), Sudarat Lee (Hillsboro, Ore.), Ashish Verma Penumatcha (Beaverton, Ore.) and Uygar E. Avci (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Thin film transistors having strain-inducing structures integrated with two-dimensional (2D) channel materials are described. In an example, an integrated circuit structure includes a two...