US Patent Issued to Intel on Sept. 30 for "Spin-orbit readout using transition metal dichalcogenides and proximitized graphene" (Oregon, Washington Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,433,172, issued on Sept. 30, was assigned to Intel Corp. (Santa Clara, Calif.).

"Spin-orbit readout using transition metal dichalcogenides and proximitized graphene" was invented by Punyashloka Debashis (Hillsboro, Ore.), Hai Li (Portland, Ore.), Chia-Ching Lin (Portland, Ore.), Dmitri Evgenievich Nikonov (Beaverton, Ore.) and Ian Alexander Young (Olympia, Wash.).

According to the abstract* released by the U.S. Patent & Trademark Office: "In one embodiment, an integrated circuit die includes: a first layer comprising a magnetoelectric material; a second layer comprising a monolayer transition metal dichalcogenide (TMD); a magnet between the first layer and the second layer, wherein ...