ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,433,056, issued on Sept. 30, was assigned to Intel Corp. (Santa Clara, Calif.).
"Planar germanium photodetector" was invented by Wei Qian (Walnut, Calif.) and Zhi Li (San Jose, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments described herein may be related to apparatuses, processes, and techniques directed to a planar germanium photodetector that includes n-type and p-type amorphous silicon deposits on a germanium slab. During operation, a uniform electrical field is formed across the germanium bulk between the amorphous silicon deposits. Other embodiments may be described and/or claimed."
The patent was filed on Dec. 20, 2021, under...