ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,979, issued on Sept. 30, was assigned to Intel Corp. (Santa Clara, Calif.).
"Gate dielectric for thin film oxide transistors" was invented by Christopher Connor (Hillsboro, Ore.), James O'Donnell (Forest Grove, Ore.) and Shailesh Kumar Madisetti (Hillsboro, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A thin film transistor (TFT) structure. In an example, the TFT includes a gate electrode, a first layer comprising an oxide semiconductor material, and a second layer between the first layer and the gate electrode. The second layer is crystalline and is in contact with the first layer, and includes zirconium and oxygen. The TFT includes a first...