US Patent Issued to Intel on Sept. 30 for "Co-integrated gallium nitride (GaN) and complementary metal oxide semiconductor (CMOS) integrated circuit technology" (Oregon Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,964, issued on Sept. 30, was assigned to Intel Corp. (Santa Clara, Calif.).

"Co-integrated gallium nitride (GaN) and complementary metal oxide semiconductor (CMOS) integrated circuit technology" was invented by Glenn A. Glass (Portland, Ore.), Anand S. Murthy (Portland, Ore.), Robert Ehlert (Portland, Ore.), Han Wui Then (Portland, Ore.), Marko Radosavljevic (Portland, Ore.), Nicole K. Thomas (Portland, Ore.) and Sandrine Charue-Bakker (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Co-integrated gallium nitride (GaN) complementary metal oxide semiconductor (CMOS) integrated circuit technology is described. In an example, a semicondu...