US Patent Issued to Intel on Sept. 23 for "Wrap-around trench contact structure and methods of fabrication" (Oregon Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,360, issued on Sept. 23, was assigned to Intel Corp. (Santa Clara, Calif.).

"Wrap-around trench contact structure and methods of fabrication" was invented by Joseph Steigerwald (Forest Grove, Ore.), Tahir Ghani (Portland, Ore.) and Oleg Golonzka (Beaverton, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A wrap-around source/drain trench contact structure is described. A plurality of semiconductor fins extend from a semiconductor substrate. A channel region is disposed in each fin between a pair of source/drain regions. An epitaxial semiconductor layer covers the top surface and sidewall surfaces of each fin over the source/drain regions, defin...