ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,543, issued on Sept. 23, was assigned to Intel Corp. (Santa Clara, Calif.).

"Selective interconnects in back-end-of-line metallization stacks of integrated circuitry" was invented by Shawna Liff (Scottsdale, Ariz.), Adel Elsherbini (Tempe, Ariz.) and Johanna Swan (Scottsdale, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit (IC) device structure, comprising a host chip having a device layer and one or more first metallization levels over adjacent first and second regions of the device layer. The first metallization levels are interconnected to the device layer. An interconnect chiplet is over the first metallization levels...