US Patent Issued to Intel on Sept. 23 for "Low germanium, high boron silicon rich capping layer for PMOS contact resistance thermal stability" (Oregon Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,342, issued on Sept. 23, was assigned to Intel Corp. (Santa Clara, Calif.).

"Low germanium, high boron silicon rich capping layer for PMOS contact resistance thermal stability" was invented by Debaleena Nandi (Hillsboro, Ore.), Cory Bomberger (Portland, Ore.), Gilbert Dewey (Beaverton, Ore.), Anand S. Murthy (Portland, Ore.), Mauro Kobrinsky (Portland, Ore.), Rushabh Shah (Hillsboro, Ore.), Chi-Hing Choi (Portland, Ore.), Harold W. Kennel (Portland, Ore.), Omair Saadat (Beaverton, Ore.), Adedapo A. Oni (North Plains, Ore.), Nazila Haratipour (Portland, Ore.) and Tahir Ghani (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments ...