ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,230, issued on Sept. 23, was assigned to Intel Corp. (Santa Clara, Calif.).
"Fin cut and fin trim isolation for advanced integrated circuit structure fabrication" was invented by Tahir Ghani (Portland, Ore.), Byron Ho (Hillsboro, Ore.), Curtis W. Ward (Hillsboro, Ore.), Michael L. Hattendorf (Portland, Ore.) and Christopher P. Auth (Portland, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit s...