US Patent Issued to Intel on Sept. 23 for "Dual metal gate structures on nanoribbon semiconductor devices" (Oregon Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,307, issued on Sept. 23, was assigned to Intel Corp. (Santa Clara, Calif.).

"Dual metal gate structures on nanoribbon semiconductor devices" was invented by Andy Chih-Hung Wei (Yamhill, Ore.), Yang-Chun Cheng (Portland, Ore.) and Dax M. Crum (Beaverton, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Techniques are provided herein to form semiconductor devices having different work function metals over different devices. The techniques can be used in any number of integrated circuit applications and are particularly useful with respect to gate-all-around (GAA) transistors. In an example, neighboring semiconductor devices each include a differen...