US Patent Issued to Intel on Sept. 16 for "Source electrode and drain electrode protection for nanowire transistors" (Oregon Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,091, issued on Sept. 16, was assigned to Intel Corp. (Santa Clara, Calif.).

"Source electrode and drain electrode protection for nanowire transistors" was invented by Karthik Jambunathan (Portland, Ore.), Biswajeet Guha (Hillsboro, Ore.), Anand S. Murthy (Portland, Ore.) and Tahir Ghani (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments herein describe techniques, systems, and method for a semiconductor device. A nanowire transistor may include a channel region including a nanowire above a substrate, a source electrode coupled to a first end of the nanowire through a first etch stop layer, and a drain electrode coupled to a ...