US Patent Issued to Intel on Oct. 7 for "Reduced contact resistivity with PMOS germanium and silicon doped with boron gate all around transistors" (Oregon Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,640, issued on Oct. 7, was assigned to Intel Corp. (Santa Clara, Calif.).

"Reduced contact resistivity with PMOS germanium and silicon doped with boron gate all around transistors" was invented by Cory Bomberger (Portland, Ore.), Anand S. Murthy (Portland, Ore.), Rushabh Shah (Hillsboro, Ore.), Kevin Cook (Portland, Ore.) and Anupama Bowonder (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Gate-all-around integrated circuit structures having confined epitaxial source or drain structures, are described. For example, an integrated circuit structure includes a plurality of nanowires above a sub-fin. A gate stack is over the plurality of n...