US Patent Issued to Intel on Oct. 7 for "High throughput additive manufacturing for integrated circuit components containing traces with feature size and grain boundaries" (American, Japanese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,438,087, issued on Oct. 7, was assigned to Intel Corp. (Santa Clara, Calif.).

"High throughput additive manufacturing for integrated circuit components containing traces with feature size and grain boundaries" was invented by Adel Elsherbini (Chandler, Ariz.), Aleksandar Aleksov (Chandler, Ariz.), Feras Eid (Chandler, Ariz.), Wenhao Li (Chandler, Ariz.), Stephen Morein (San Jose, Calif.) and Yoshihiro Tomita (Tsukuba, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Technologies for high throughput additive manufacturing (HTAM) structures are disclosed. In one embodiment, a sacrificial dielectric is formed to provide a negative mask on which to patte...