ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,659, issued on Oct. 7, was assigned to Intel Corp. (Santa Clara, Calif.).

"Gate-all-around integrated circuit structures having germanium-diffused nanoribbon channel structures" was invented by Andy Chih-Hung Wei (Yamhill, Ore.), Guillaume Bouche (Hillsboro, Ore.) and Jack T. Kavalieros (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Gate-all-around integrated circuit structures having germanium-diffused nanowire/nanoribbon channel structures, and methods of fabricating gate-all-around integrated circuit structures having germanium-diffused nanowire/nanoribbon channel structures, are described. For example, an integrated circuit struct...