US Patent Issued to Intel on Oct. 7 for "Co-deposition of titanium and silicon for improved silicon germanium source and drain contacts" (Oregon Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,669, issued on Oct. 7, was assigned to Intel Corp. (Santa Clara, Calif.).

"Co-deposition of titanium and silicon for improved silicon germanium source and drain contacts" was invented by Debaleena Nandi (Hillsboro, Ore.), Chi-Hing Choi (Portland, Ore.), Gilbert Dewey (Beaverton, Ore.), Harold Kennel (Portland, Ore.), Omair Saadat (Portland, Ore.), Jitendra Kumar Jha (Hillsboro, Ore.), Adedapo Oni (North Plains, Ore.), Nazila Haratipour (Portland, Ore.), Anand Murthy (Portland, Ore.) and Tahir Ghani (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Source and drain contacts that provide improved contact resistance and contact interface st...