ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,779, issued on Oct. 28, was assigned to Intel Corp. (Santa Clara, Calif.).
"Gate cut structures" was invented by Leonard P. Guler (Hillsboro, Ore.), Shengsi Liu (Portland, Ore.), Robert Joachim (Beaverton, Ore.), Mohammad Hasan (Aloha, Ore.) and Tahir Ghani (Portland, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Techniques are provided herein to form semiconductor devices having gate cut structures. Adjacent semiconductor devices having semiconductor regions (e.g., fins or nanoribbons) extending in a first direction have a gate structure that extends over the semiconductor regions in a second direction and are separated by a gate cut structur...