US Patent Issued to Intel on Oct. 28 for "Conductive contacts wrapped around epitaxial source or drain regions" (Oregon Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,778, issued on Oct. 28, was assigned to Intel Corp. (Santa Clara, Calif.).

"Conductive contacts wrapped around epitaxial source or drain regions" was invented by Leonard P. Guler (Hillsboro, Ore.), Gilbert Dewey (Beaverton, Ore.), Saurabh Morarka (Portland, Ore.), Sikandar Abbas (Forest Grove, Ore.) and Mohammad Hasan (Aloha, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Techniques are provided herein to form semiconductor devices having epitaxial diffusion regions (e.g., source and/or drain regions) wrapped by a conductive contact. In an example, a semiconductor device includes a source or drain region and a conductive layer that extends arou...