US Patent Issued to Intel on Oct. 21 for "Single gated 3D nanowire inverter for high density thick gate SoC applications" (Oregon Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,145, issued on Oct. 21, was assigned to Intel Corp. (Santa Clara, Calif.).

"Single gated 3D nanowire inverter for high density thick gate SoC applications" was invented by Rahul Ramaswamy (Portland, Ore.), Walid M. Hafez (Portland, Ore.), Tanuj Trivedi (Hillsboro, Ore.), Jeong Dong Kim (Scappoose, Ore.), Ting Chang (Portland, Ore.), Babak Fallahazad (Portland, Ore.), Hsu-Yu Chang (Hillsboro, Ore.) and Nidhi Nidhi (Hillsboro, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments disclosed herein include semiconductor devices and methods of forming such devices. In an embodiment, a semiconductor device comprises a substrate, and a first tran...