ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,160, issued on Oct. 21, was assigned to Intel Corp. (Santa Clara, Calif.).
"Deep etch processing for transistors having varying pitch" was invented by Leonard P. Guler (Hillsboro, Ore.), Mohammad Hasan (Aloha, Ore.), Tahir Ghani (Portland, Ore.) and Charles H. Wallace (Portland, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Techniques are provided herein to form semiconductor devices having different pitches, yet maintaining a substantially similar depth to the diffusion regions between the semiconductor regions. In an example, a row of semiconductor devices having semiconductor regions extending in a first direction can include some devices h...